Chemical Vapor Deposition

Gelest, Inc. offers a large number of chemical vapor deposition (CVD) precursors for a wide variety of thin film materials.  CVD is a technique in which a chemical is reacted in the gas phase to deposit a film on a substrate.  Metal-organic precursors that are volatile and reactive in the gas phase are employed for CVD.  A wide variety of co-reactants and reaction conditions can be used to deposit mainly metal, metal oxides or metal nitrides.

Gelest, Inc. offers a product line of metal alkoxide, substituted diketonate, amide, alkyl and halogen complexes.

Applicable Gelest Brochures:
Hydrophobicity

Listed below are some of our most popular products. Gelest, Inc. offers hundreds of other precursors for materials of interest.